p-channel enhancement mode field effect transistor absolute maxium ratings
t a =25 unless otherwise noted parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v i d -5.3 a drain current-continuous a @tj=125 - pulse b d i dm -24 a drain-source diode forward current a i s -1.7 a maximum power dissipation a p d 2.5 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristics thermal resistance, junction-to ambient a rth j a 50 /w http//www.mtsemi.com 1 features super high dense cell design for low r ds(on) rugged and reliable s imple drive requirement sop-8 package product summary v dss i d r ds(on) (m $ ) typ 46@ v gs =-10v -30v -5.3a 78 @ v gs =-4.5v MT4953 mos-tech semiconductor corp mt note the MT4953 is available in a lead-free package www.datasheet.co.kr datasheet pdf - http://www..net/
MT4953 electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v,i d =-250 a -30 v zero gate voltage drain current i dss v ds =-24v,v gs =0v -1 a gate-body leakage i gss v gs =20v,v ds =0v 100 na on characteritics gate threshold voltage v gs (th) v ds =v gs ,i d =-250 a -1 -1.5 -2.5 v v gs =-10v,i d =-5.6a 46 55 drain-source on-state resistance r ds(on) v gs =-4.5v,i d =-4.2a 78 85 m $ forward transconductance ? fs v gs =-5v,i d =-5.6a 5 s daynamic characteristics input capacitance c iss 582 pf output capacitance c oss 125 pf reverse transfer capacitance c rss v ds =-15v,v gs =0v f=1.0mh z 86 pf switching characterisistics turn-on delay time t d(on) 9 ns rise time tr 10 ns turn-off delay time t d(off) 38 ns fall time tf v dd =-15v i d =-5.3a, v gen =-4.5v r l =10ohm r gen =10ohm 23 ns total gate charge q ? 11.7 nc gate-source charge q ? s 2.1 nc gate-drain charge q ? d v ds =-15v,i d =-1a v gs =-10v 2.9 nc http//www.mtsemi.com 2 www.datasheet.co.kr datasheet pdf - http://www..net/
MT4953 electrical char acterics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit drain-source diode characteristics diode forward voltage v sd v gs =0v,i s =-1.7a -0.84 -1.2 v notes a. surface mounted on fr4 board, t &? 10sec b. pulse test: pulse width &? 300us, duty &? 2 c. guaranteed by design, not subject to production testing. 7 % 4
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